Hi ,i have a question.While finding the band gap energy of silicon ,after a particular temperature i got a junction voltage increases with increase in temperature.what does it indicte ?
with the increase in temperature the intrinsic charge carriers got thermally generated and they recombine(holes+ electrons) at the junction and so barrier voltage(junction voltage) increases because of the increase in the depletion region which is full of immobile ions and lacking of free charge carriers to conduction.
with the increase in temperature the intrinsic charge carriers got thermally generated and they recombine(holes+ electrons) at the junction and so barrier voltage(junction voltage) increases because of the increase in the depletion region which is full of immobile ions and lacking of free charge carriers to conduction.